IS61NLP102418-200B3I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Access Time :

3.1ns

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE

JESD-609 Code :

e0

Supply Voltage-Min (Vsup) :

3.135V

Memory Width :

18

Memory Size :

18Mb 1M x 18

Number of Functions :

1

Memory Type :

Volatile

Power Supplies :

2.5/3.33.3V

Supply Current-Max :

0.475mA

Terminal Pitch :

1mm

Package / Case :

165-TBGA

Additional Feature :

PIPELINED ARCHITECTURE

Height Seated (Max) :

1.2mm

Standby Voltage-Min :

3.14V

HTS Code :

8542.32.00.41

Packaging :

Tray

Clock Frequency :

200MHz

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Lead (Sn/Pb)

Width :

13mm

I/O Type :

COMMON

Number of Terminations :

165

Supply Voltage-Max (Vsup) :

3.465V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Organization :

1MX18

Memory Interface :

Parallel

Operating Temperature :

-40°C~85°C TA

Surface Mount :

yes

Standby Current-Max :

0.075A

Qualification Status :

Not Qualified

Length :

15mm

ECCN Code :

3A991.B.2.A

Memory Density :

18874368 bit

Pbfree Code :

No

Terminal Position :

BOTTOM

Voltage - Supply :

3.135V~3.465V

Supply Voltage :

3.3V

Number of Pins :

165

Memory Format :

SRAM

Pin Count :

165

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED