IS61NLP102418-200B3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Density :

18874368 bit

Voltage - Supply :

3.135V~3.465V

Supply Voltage-Min (Vsup) :

3.135V

Terminal Pitch :

1mm

Surface Mount :

yes

Supply Voltage-Max (Vsup) :

3.465V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Terminations :

165

Access Time :

3.1ns

Additional Feature :

PIPELINED ARCHITECTURE

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Pin Count :

165

Number of Functions :

1

Memory Width :

18

Supply Current-Max :

0.425mA

Standby Current-Max :

0.06A

Width :

13mm

Length :

15mm

Number of Pins :

165

Height Seated (Max) :

1.2mm

Memory Size :

18Mb 1M x 18

Organization :

1MX18

JESD-609 Code :

e0

HTS Code :

8542.32.00.41

Output Characteristics :

3-STATE

Memory Format :

SRAM

Standby Voltage-Min :

3.14V

Operating Temperature :

0°C~70°C TA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

165-TBGA

I/O Type :

COMMON

Supply Voltage :

3.3V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Clock Frequency :

200MHz

Memory Type :

Volatile

Packaging :

Tray

Terminal Position :

BOTTOM

Qualification Status :

Not Qualified

Pbfree Code :

No

Power Supplies :

2.5/3.33.3V

ECCN Code :

3A991.B.2.A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED