IS61LV2568L-10T

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Organization :

256KX8

Operating Supply Voltage :

3.3V

Write Cycle Time - Word, Page :

10ns

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Position :

Dual

I/O Type :

COMMON

Sync/Async :

ASYNCHRONOUS

Lead Free :

Lead Free

Packaging :

Tray

Supply Voltage-Min (Vsup) :

2.97V

Memory Size :

2Mb 256K x 8

Word Size :

8B

Address Bus Width :

18b

Memory Format :

SRAM

Surface Mount :

yes

Standby Current-Max :

0.003A

Number of Functions :

1

Voltage - Supply :

3.135V~3.6V

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Memory Width :

8

Radiation Hardening :

No

Output Characteristics :

3-STATE

Memory Type :

Volatile

Number of Pins :

44

Number of Terminations :

44

Peak Reflow Temperature (Cel) :

260

Number of Ports :

1

Pbfree Code :

yes

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Operating Temperature :

0°C~70°C TA

Supply Voltage-Max (Vsup) :

3.63V

Standby Voltage-Min :

3V

Density :

2 Mb

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Supply Voltage :

3.3V

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Pin Count :

44

Nominal Supply Current :

60mA