IS43R86400D-5B

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Time@Peak Reflow Temperature-Max (s) :

40

I/O Type :

COMMON

Write Cycle Time - Word, Page :

15ns

Mounting Type :

Surface Mount

Operating Mode :

SYNCHRONOUS

JESD-609 Code :

e1

Nominal Supply Current :

430mA

Supply Voltage-Min (Vsup) :

2.5V

Organization :

64MX8

Mount :

Surface Mount

Voltage - Supply :

2.5V~2.7V

Number of Ports :

1

Memory Width :

8

Factory Lead Time :

8 Weeks

Additional Feature :

AUTO/SELF REFRESH

Number of Pins :

60

Power Supplies :

2.6V

Density :

512 Mb

Supply Voltage :

2.6V

Refresh Cycles :

8192

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Clock Frequency :

200MHz

Qualification Status :

Not Qualified

Memory Format :

DRAM

Memory Interface :

Parallel

Number of Terminations :

60

Data Bus Width :

8B

Output Characteristics :

3-STATE

Packaging :

Tray

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

HTS Code :

8542.32.00.28

Standby Current-Max :

0.025A

Package / Case :

60-TFBGA

Pin Count :

60

Memory Type :

Volatile

Address Bus Width :

15b

Number of Functions :

1

Height Seated (Max) :

1.2mm

Terminal Pitch :

1mm

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~85°C TA

Access Time :

700ps

ECCN Code :

EAR99

Memory Size :

512Mb 64M x 8

Terminal Position :

BOTTOM

Sequential Burst Length :

248

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Max (Vsup) :

2.7V

Interleaved Burst Length :

248

Length :

13mm