IS43LD16640C-25BLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Format :

DRAM

Write Cycle Time - Word, Page :

15ns

JESD-609 Code :

e1

Package / Case :

134-TFBGA

Packaging :

Tray

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PBGA-B134

Supply Voltage-Max (Vsup) :

1.3V

ECCN Code :

EAR99

Memory Density :

1073741824 bit

Additional Feature :

SELF REFRESH; IT ALSO REQUIRES 1.8V NOM

Clock Frequency :

400MHz

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Supply Voltage-Min (Vsup) :

1.14V

Operating Mode :

SYNCHRONOUS

Supply Voltage :

1.2V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

134

Operating Temperature :

-40°C~85°C TC

Terminal Pitch :

0.65mm

Terminal Position :

BOTTOM

Factory Lead Time :

14 Weeks

Memory Interface :

Parallel

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Ports :

1

Mounting Type :

Surface Mount

Surface Mount :

yes

Memory Size :

1Gb 64M x 16

Memory Type :

Volatile

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

11.5mm

Width :

10mm

Height Seated (Max) :

1.1mm

Organization :

64MX16

Access Mode :

MULTI BANK PAGE BURST

Memory Width :

16

Voltage - Supply :

1.14V~1.95V