IS43DR86400D-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

60

Supply Voltage-Max (Vsup) :

1.9V

Package / Case :

60-TFBGA

Address Bus Width :

14b

HTS Code :

8542.32.00.28

RoHS Status :

ROHS3 Compliant

Number of Pins :

60

Supply Voltage-Min (Vsup) :

1.7V

Write Cycle Time - Word, Page :

15ns

Operating Mode :

SYNCHRONOUS

Density :

512 Mb

Qualification Status :

Not Qualified

I/O Type :

COMMON

Organization :

64MX8

Additional Feature :

PROGRAMMABLE CAS LATENCY

JESD-609 Code :

e1

Standby Current-Max :

0.025A

Interleaved Burst Length :

48

Memory Interface :

Parallel

Height Seated (Max) :

1.2mm

Memory Format :

DRAM

Terminal Pitch :

0.8mm

Packaging :

Tray

Mounting Type :

Surface Mount

Sequential Burst Length :

48

Surface Mount :

yes

Operating Temperature :

-40°C~85°C TA

Clock Frequency :

333MHz

Refresh Cycles :

8192

Memory Size :

512Mb 64M x 8

Memory Type :

Volatile

Length :

10.5mm

Supply Current-Max :

0.23mA

Memory Width :

8

Number of Functions :

1

ECCN Code :

EAR99

Access Time :

450ps

Number of Ports :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Output Characteristics :

3-STATE

Factory Lead Time :

8 Weeks

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Terminal Finish :

TIN SILVER COPPER

Operating Supply Voltage :

1.8V

Voltage - Supply :

1.7V~1.9V