IS43DR86400D-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

ECCN Code :

EAR99

Access Time :

450ps

Length :

10.5mm

Supply Current-Max :

0.23mA

Organization :

64MX8

Number of Terminations :

60

Memory Size :

512Mb 64M x 8

Supply Voltage :

1.8V

Qualification Status :

Not Qualified

Interleaved Burst Length :

48

Memory Interface :

Parallel

Terminal Pitch :

0.8mm

Packaging :

Tray

Standby Current-Max :

0.025A

Memory Width :

8

Memory Type :

Volatile

Operating Mode :

SYNCHRONOUS

Package / Case :

60-TFBGA

Address Bus Width :

14b

Write Cycle Time - Word, Page :

15ns

RoHS Status :

ROHS3 Compliant

Supply Voltage-Max (Vsup) :

1.9V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Ports :

1

Factory Lead Time :

8 Weeks

Output Characteristics :

3-STATE

Supply Voltage-Min (Vsup) :

1.7V

JESD-609 Code :

e1

Terminal Position :

BOTTOM

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Operating Temperature :

-40°C~85°C TA

Additional Feature :

PROGRAMMABLE CAS LATENCY

Refresh Cycles :

8192

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Sequential Burst Length :

48

Operating Supply Voltage :

1.8V

Surface Mount :

yes

Voltage - Supply :

1.7V~1.9V

Number of Functions :

1

Clock Frequency :

333MHz

HTS Code :

8542.32.00.28

Terminal Finish :

TIN SILVER COPPER

Density :

512 Mb

Memory Format :

DRAM

Number of Pins :

60