IS43DR86400C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Operating Temperature :

-40°C~85°C TA

Organization :

64MX8

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Sequential Burst Length :

48

RoHS Status :

ROHS3 Compliant

Clock Frequency :

333MHz

Package / Case :

60-TFBGA

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Length :

10.5mm

Output Characteristics :

3-STATE

Address Bus Width :

16b

Number of Functions :

1

Number of Terminations :

60

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Supply Voltage :

1.8V

Refresh Cycles :

8192

Nominal Supply Current :

250mA

Memory Format :

DRAM

Terminal Position :

BOTTOM

Operating Supply Voltage :

1.8V

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage-Min (Vsup) :

1.7V

Number of Pins :

60

Interleaved Burst Length :

48

Terminal Pitch :

0.8mm

Standby Current-Max :

0.011A

Density :

512 Mb

Memory Type :

Volatile

Memory Interface :

Parallel

Packaging :

Tray

Number of Ports :

1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Write Cycle Time - Word, Page :

15ns

Memory Size :

512Mb 64M x 8

Data Bus Width :

8B

Memory Width :

8

Max Supply Current :

120mA

Access Time :

450ps

Voltage - Supply :

1.7V~1.9V

Supply Voltage-Max (Vsup) :

1.9V