IS43DR16640C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Mounting Type :

Surface Mount

Height Seated (Max) :

1.2mm

Additional Feature :

AUTO/SELF REFRESH

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

TIN SILVER COPPER

Supply Voltage-Max (Vsup) :

1.9V

Width :

8mm

Memory Density :

1073741824 bit

Organization :

64MX16

Sequential Burst Length :

48

Number of Terminations :

84

Supply Current-Max :

0.27mA

Clock Frequency :

333MHz

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Write Cycle Time - Word, Page :

15ns

Surface Mount :

yes

Packaging :

Tray

Time@Peak Reflow Temperature-Max (s) :

10

Memory Size :

1Gb 64M x 16

ECCN Code :

EAR99

Terminal Position :

BOTTOM

Operating Temperature :

0°C~85°C TC

Number of Functions :

1

Operating Mode :

SYNCHRONOUS

Number of Ports :

1

Length :

12.5mm

Qualification Status :

Not Qualified

Refresh Cycles :

8192

Voltage - Supply :

1.7V~1.9V

Factory Lead Time :

8 Weeks

Output Characteristics :

3-STATE

Memory Width :

16

Package / Case :

84-TFBGA

RoHS Status :

ROHS3 Compliant

Terminal Pitch :

0.8mm

Memory Interface :

Parallel

JESD-609 Code :

e1

I/O Type :

COMMON

JESD-30 Code :

R-PBGA-B84

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Access Time :

450ps

Memory Format :

DRAM

Power Supplies :

1.8V

Memory Type :

Volatile

Supply Voltage :

1.8V

Standby Current-Max :

0.025A