IS43DR16640C-25DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Address Bus Width :

13b

Memory Interface :

Parallel

Interleaved Burst Length :

48

Data Bus Width :

16b

Time@Peak Reflow Temperature-Max (s) :

10

Write Cycle Time - Word, Page :

15ns

Supply Voltage :

1.8V

Number of Pins :

84

I/O Type :

COMMON

Output Characteristics :

3-STATE

Operating Temperature :

-40°C~85°C TA

JESD-609 Code :

e1

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Supply Current-Max :

0.28mA

Operating Supply Voltage :

1.8V

Length :

12.5mm

Organization :

64MX16

Memory Format :

DRAM

Peak Reflow Temperature (Cel) :

260

Density :

1 Gb

Voltage - Supply :

1.7V~1.9V

Height Seated (Max) :

1.2mm

Terminal Position :

BOTTOM

Contact Plating :

Copper, Silver, Tin

Memory Type :

Volatile

Factory Lead Time :

8 Weeks

Standby Current-Max :

0.025A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Package / Case :

84-TFBGA

Mount :

Surface Mount

Mounting Type :

Surface Mount

Supply Voltage-Min (Vsup) :

1.7V

Memory Width :

16

Supply Voltage-Max (Vsup) :

1.9V

Operating Mode :

SYNCHRONOUS

Qualification Status :

Not Qualified

Terminal Pitch :

0.8mm

Packaging :

Tray

Terminal Finish :

TIN SILVER COPPER

Refresh Cycles :

8192

Access Time :

400ps

Additional Feature :

AUTO/SELF REFRESH

Number of Terminations :

84

Max Frequency :

400MHz

ECCN Code :

EAR99

Memory Size :

1Gb 64M x 16

Sequential Burst Length :

48

Number of Ports :

1