IS43DR16640C-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

ECCN Code :

EAR99

Operating Temperature :

-40°C~85°C TA

Data Bus Width :

16b

Operating Supply Voltage :

1.8V

Time@Peak Reflow Temperature-Max (s) :

10

Voltage - Supply :

1.7V~1.9V

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

15ns

Interleaved Burst Length :

48

Peak Reflow Temperature (Cel) :

260

Operating Mode :

SYNCHRONOUS

JESD-609 Code :

e1

Mount :

Surface Mount

Density :

1 Gb

Sequential Burst Length :

48

I/O Type :

COMMON

Length :

12.5mm

Max Frequency :

400MHz

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage-Min (Vsup) :

1.7V

Memory Width :

16

Refresh Cycles :

8192

Qualification Status :

Not Qualified

Factory Lead Time :

8 Weeks

Memory Type :

Volatile

Access Time :

400ps

Supply Current-Max :

0.28mA

Number of Ports :

1

Memory Size :

1Gb 64M x 16

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

84

Standby Current-Max :

0.025A

Supply Voltage-Max (Vsup) :

1.9V

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Height Seated (Max) :

1.2mm

Address Bus Width :

13b

Package / Case :

84-TFBGA

Supply Voltage :

1.8V

Memory Format :

DRAM

Number of Pins :

84

Organization :

64MX16

Packaging :

Tray

Contact Plating :

Copper, Silver, Tin

Output Characteristics :

3-STATE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Terminal Pitch :

0.8mm