IS43DR16640B-3DBLI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Height Seated (Max) :

1.2mm

RoHS Status :

ROHS3 Compliant

Length :

12.5mm

Memory Width :

16

Number of Functions :

1

Supply Voltage-Min (Vsup) :

1.7V

Number of Ports :

1

Supply Voltage-Max (Vsup) :

1.9V

Voltage - Supply :

1.7V~1.9V

Memory Size :

1Gb 64M x 16

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Package / Case :

84-TFBGA

Memory Format :

DRAM

Data Bus Width :

16b

Terminal Pitch :

0.8mm

Output Characteristics :

3-STATE

Density :

1 Gb

Mounting Type :

Surface Mount

Nominal Supply Current :

220mA

Number of Pins :

84

Interleaved Burst Length :

48

Additional Feature :

AUTO/SELF REFRESH

I/O Type :

COMMON

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Memory Type :

Volatile

Operating Temperature :

-40°C~85°C TA

Address Bus Width :

16b

Refresh Cycles :

8192

Number of Terminations :

84

Sequential Burst Length :

48

Clock Frequency :

333MHz

Radiation Hardening :

No

Standby Current-Max :

0.015A

Mount :

Surface Mount

Operating Supply Voltage :

1.8V

Organization :

64MX16

Write Cycle Time - Word, Page :

15ns

Factory Lead Time :

8 Weeks

Access Time :

450ps