IS43DR16640B-3DBLI-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Data Bus Width :

16b

Additional Feature :

AUTO/SELF REFRESH

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Number of Terminations :

84

Memory Width :

16

Number of Ports :

1

Write Cycle Time - Word, Page :

15ns

Mounting Type :

Surface Mount

Terminal Position :

BOTTOM

Organization :

64MX16

Height Seated (Max) :

1.2mm

Length :

12.5mm

Radiation Hardening :

No

Sequential Burst Length :

48

Supply Voltage :

1.8V

Nominal Supply Current :

220mA

Terminal Pitch :

0.8mm

Operating Supply Voltage :

1.8V

Supply Voltage-Min (Vsup) :

1.7V

Memory Size :

1Gb 64M x 16

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tape and Reel (TR)

Clock Frequency :

333MHz

Refresh Cycles :

8192

Memory Format :

DRAM

Memory Interface :

Parallel

Mount :

Surface Mount

Standby Current-Max :

0.015A

I/O Type :

COMMON

Access Time :

450ps

Density :

1 Gb

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

8 Weeks

Number of Functions :

1

ECCN Code :

EAR99

Package / Case :

84-TFBGA

Supply Voltage-Max (Vsup) :

1.9V

Number of Pins :

84

Voltage - Supply :

1.7V~1.9V

Operating Temperature :

-40°C~85°C TA

Memory Type :

Volatile

Address Bus Width :

16b