IS43DR16640B-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

Terminal Pitch :

0.8mm

Number of Terminations :

84

Packaging :

Tray

Mount :

Surface Mount

Nominal Supply Current :

220mA

Address Bus Width :

16b

Radiation Hardening :

No

Factory Lead Time :

8 Weeks

Operating Supply Voltage :

1.8V

Supply Voltage-Max (Vsup) :

1.9V

HTS Code :

8542.32.00.32

Number of Ports :

1

Number of Pins :

84

Access Time :

450ps

Standby Current-Max :

0.015A

Contact Plating :

Copper, Silver, Tin

Voltage - Supply :

1.7V~1.9V

Length :

12.5mm

Number of Functions :

1

RoHS Status :

ROHS3 Compliant

Sequential Burst Length :

48

Memory Size :

1Gb 64M x 16

Memory Format :

DRAM

Interleaved Burst Length :

48

Supply Voltage-Min (Vsup) :

1.7V

Refresh Cycles :

8192

Additional Feature :

AUTO/SELF REFRESH

Output Characteristics :

3-STATE

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Density :

1 Gb

Terminal Position :

BOTTOM

Package / Case :

84-TFBGA

Mounting Type :

Surface Mount

Height Seated (Max) :

1.2mm

Data Bus Width :

16b

Operating Temperature :

-40°C~85°C TA

ECCN Code :

EAR99

Memory Interface :

Parallel

Clock Frequency :

333MHz

I/O Type :

COMMON

Memory Type :

Volatile

Supply Voltage :

1.8V

Memory Width :

16

Organization :

64MX16