IS43DR16640B-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Address Bus Width :

16b

Nominal Supply Current :

220mA

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Number of Functions :

1

Number of Ports :

1

Terminal Position :

BOTTOM

Radiation Hardening :

No

Memory Width :

16

Mount :

Surface Mount

Number of Pins :

84

Supply Voltage-Max (Vsup) :

1.9V

Memory Type :

Volatile

Access Time :

450ps

Interleaved Burst Length :

48

Output Characteristics :

3-STATE

Refresh Cycles :

8192

Number of Terminations :

84

Height Seated (Max) :

1.2mm

Sequential Burst Length :

48

Package / Case :

84-TFBGA

Supply Voltage-Min (Vsup) :

1.7V

Data Bus Width :

16b

HTS Code :

8542.32.00.32

Organization :

64MX16

Operating Supply Voltage :

1.8V

Clock Frequency :

333MHz

Factory Lead Time :

8 Weeks

Length :

12.5mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

AUTO/SELF REFRESH

Packaging :

Tray

Density :

1 Gb

Contact Plating :

Copper, Silver, Tin

Memory Interface :

Parallel

Supply Voltage :

1.8V

I/O Type :

COMMON

Voltage - Supply :

1.7V~1.9V

Write Cycle Time - Word, Page :

15ns

Memory Format :

DRAM

Memory Size :

1Gb 64M x 16

Standby Current-Max :

0.015A

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant