IS43DR16640B-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Voltage - Supply :

1.7V~1.9V

Memory Interface :

Parallel

Terminal Position :

BOTTOM

Standby Current-Max :

0.015A

Memory Type :

Volatile

Density :

1 Gb

Data Bus Width :

16b

Organization :

64MX16

Mount :

Surface Mount

Supply Voltage-Max (Vsup) :

1.9V

Operating Temperature :

0°C~70°C TA

HTS Code :

8542.32.00.32

Package / Case :

84-TFBGA

Sequential Burst Length :

48

Output Characteristics :

3-STATE

Operating Mode :

SYNCHRONOUS

ECCN Code :

EAR99

Factory Lead Time :

8 Weeks

I/O Type :

COMMON

Number of Pins :

84

Access Time :

450ps

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

333MHz

Supply Voltage-Min (Vsup) :

1.7V

Interleaved Burst Length :

48

Nominal Supply Current :

220mA

Address Bus Width :

16b

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

1.8V

Memory Width :

16

Memory Format :

DRAM

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Memory Size :

1Gb 64M x 16

Packaging :

Tray

Qualification Status :

Not Qualified

Number of Functions :

1

Length :

12.5mm

Number of Terminations :

84

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Ports :

1

Additional Feature :

AUTO/SELF REFRESH

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Supply Voltage :

1.8V