IS43DR16640B-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

HTS Code :

8542.32.00.32

Supply Voltage-Max (Vsup) :

1.9V

Operating Supply Voltage :

1.8V

Number of Functions :

1

Mounting Type :

Surface Mount

Output Characteristics :

3-STATE

Factory Lead Time :

8 Weeks

Data Bus Width :

16b

Qualification Status :

Not Qualified

Number of Pins :

84

Memory Width :

16

Sequential Burst Length :

48

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

333MHz

I/O Type :

COMMON

Mount :

Surface Mount

Standby Current-Max :

0.015A

Terminal Pitch :

0.8mm

Number of Ports :

1

Package / Case :

84-TFBGA

Density :

1 Gb

Additional Feature :

AUTO/SELF REFRESH

Terminal Position :

BOTTOM

Operating Mode :

SYNCHRONOUS

Refresh Cycles :

8192

Packaging :

Tray

Memory Size :

1Gb 64M x 16

Height Seated (Max) :

1.2mm

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

1.7V~1.9V

Access Time :

450ps

Supply Voltage :

1.8V

Organization :

64MX16

Memory Format :

DRAM

Number of Terminations :

84

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

0°C~70°C TA

Memory Type :

Volatile

Memory Interface :

Parallel

ECCN Code :

EAR99

Interleaved Burst Length :

48

Supply Voltage-Min (Vsup) :

1.7V

Nominal Supply Current :

220mA

Address Bus Width :

16b

Length :

12.5mm