IS43DR16640B-3DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Number of Terminations :

84

Mounting Type :

Surface Mount

Operating Supply Voltage :

1.8V

RoHS Status :

Non-RoHS Compliant

Voltage - Supply :

1.7V~1.9V

Operating Temperature :

-40°C~85°C TA

Qualification Status :

Not Qualified

Memory Size :

1Gb 64M x 16

Clock Frequency :

333MHz

Package / Case :

84-TFBGA

Supply Voltage-Max (Vsup) :

1.9V

Sequential Burst Length :

48

Standby Current-Max :

0.015A

ECCN Code :

EAR99

HTS Code :

8542.32.00.32

Memory Format :

DRAM

Supply Current-Max :

0.25mA

Surface Mount :

yes

Supply Voltage :

1.8V

Access Time :

450ps

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height Seated (Max) :

1.2mm

Number of Functions :

1

Memory Interface :

Parallel

Number of Pins :

84

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

15ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Output Characteristics :

3-STATE

Density :

1 Gb

Organization :

64MX16

Data Bus Width :

16b

I/O Type :

COMMON

Memory Width :

16

Terminal Pitch :

0.8mm

Operating Mode :

SYNCHRONOUS

Refresh Cycles :

8192

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Type :

Volatile

Length :

12.5mm

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Number of Ports :

1

Additional Feature :

AUTO/SELF REFRESH

Interleaved Burst Length :

48