IS43DR16640B-25EBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Temperature :

-40°C~85°C TA

Package / Case :

84-TFBGA

Terminal Position :

BOTTOM

Refresh Cycles :

8192

Density :

1 Gb

Terminal Pitch :

0.8mm

Length :

12.5mm

ECCN Code :

EAR99

Mount :

Surface Mount

Write Cycle Time - Word, Page :

15ns

Memory Format :

DRAM

RoHS Status :

ROHS3 Compliant

Additional Feature :

AUTO/SELF REFRESH

Number of Ports :

1

Supply Voltage-Max (Vsup) :

1.9V

Max Frequency :

400MHz

HTS Code :

8542.32.00.32

Number of Functions :

1

Nominal Supply Current :

240mA

Sequential Burst Length :

48

Memory Type :

Volatile

Address Bus Width :

16b

Number of Pins :

84

Supply Voltage :

1.8V

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Access Time :

450ps

Packaging :

Tray

Memory Interface :

Parallel

Operating Supply Voltage :

1.8V

Memory Width :

16

Number of Terminations :

84

Organization :

64MX16

Operating Mode :

SYNCHRONOUS

Memory Size :

1Gb 64M x 16

Supply Voltage-Min (Vsup) :

1.7V

Qualification Status :

Not Qualified

Standby Current-Max :

0.015A

Mounting Type :

Surface Mount

Voltage - Supply :

1.7V~1.9V

Data Bus Width :

16b

I/O Type :

COMMON

Height Seated (Max) :

1.2mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)