IS43DR16640B-25EBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Sequential Burst Length :

48

Standby Current-Max :

0.015A

Packaging :

Tray

Supply Voltage-Max (Vsup) :

1.9V

Refresh Cycles :

8192

Write Cycle Time - Word, Page :

15ns

Interleaved Burst Length :

48

Package / Case :

84-TFBGA

Mount :

Surface Mount

Supply Voltage-Min (Vsup) :

1.7V

RoHS Status :

ROHS3 Compliant

Nominal Supply Current :

240mA

Density :

1 Gb

Max Frequency :

400MHz

Data Bus Width :

16b

Operating Mode :

SYNCHRONOUS

Memory Size :

1Gb 64M x 16

Number of Pins :

84

Memory Interface :

Parallel

Number of Ports :

1

Organization :

64MX16

Access Time :

450ps

HTS Code :

8542.32.00.32

Height Seated (Max) :

1.2mm

Memory Type :

Volatile

Terminal Pitch :

0.8mm

Output Characteristics :

3-STATE

Length :

12.5mm

Additional Feature :

AUTO/SELF REFRESH

Number of Functions :

1

Qualification Status :

Not Qualified

Operating Supply Voltage :

1.8V

Mounting Type :

Surface Mount

I/O Type :

COMMON

Memory Format :

DRAM

Memory Width :

16

Operating Temperature :

-40°C~85°C TA

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Address Bus Width :

16b

Voltage - Supply :

1.7V~1.9V

Number of Terminations :

84

Supply Voltage :

1.8V

Terminal Position :

BOTTOM