IS43DR16640B-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Additional Feature :

AUTO/SELF REFRESH

Operating Supply Voltage :

1.8V

Supply Voltage :

1.8V

Memory Format :

DRAM

Qualification Status :

Not Qualified

Write Cycle Time - Word, Page :

15ns

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

Length :

12.5mm

Output Characteristics :

3-STATE

Interleaved Burst Length :

48

Packaging :

Tray

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

Number of Pins :

84

Data Bus Width :

16b

Number of Ports :

1

Voltage - Supply :

1.7V~1.9V

Standby Current-Max :

0.015A

Terminal Position :

BOTTOM

Package / Case :

84-TFBGA

Supply Voltage-Max (Vsup) :

1.9V

Operating Mode :

SYNCHRONOUS

Sequential Burst Length :

48

Organization :

64MX16

Memory Width :

16

Height Seated (Max) :

1.2mm

Factory Lead Time :

8 Weeks

HTS Code :

8542.32.00.32

Terminal Pitch :

0.8mm

Memory Size :

1Gb 64M x 16

Mount :

Surface Mount

Address Bus Width :

16b

Refresh Cycles :

8192

Supply Voltage-Min (Vsup) :

1.7V

Mounting Type :

Surface Mount

Number of Terminations :

84

Number of Functions :

1

Operating Temperature :

0°C~70°C TA

Access Time :

400ps

Nominal Supply Current :

240mA

Clock Frequency :

400MHz

Density :

1 Gb

ECCN Code :

EAR99