IS43DR16640B-25DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Operating Mode :

SYNCHRONOUS

Supply Current-Max :

0.27mA

Operating Temperature :

-40°C~85°C TA

Supply Voltage-Min (Vsup) :

1.7V

Memory Width :

16

Height Seated (Max) :

1.2mm

Interleaved Burst Length :

48

I/O Type :

COMMON

Access Time :

400ps

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

1Gb 64M x 16

Length :

12.5mm

Output Characteristics :

3-STATE

Memory Density :

1073741824 bit

Write Cycle Time - Word, Page :

15ns

Terminal Position :

BOTTOM

Width :

8mm

RoHS Status :

Non-RoHS Compliant

Reach Compliance Code :

Compliant

Packaging :

Tray

HTS Code :

8542.32.00.32

Standby Current-Max :

0.015A

Power Supplies :

1.8V

Additional Feature :

AUTO/SELF REFRESH

Terminal Pitch :

0.8mm

Memory Interface :

Parallel

Refresh Cycles :

8192

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

Supply Voltage :

1.8V

Number of Ports :

1

Memory Type :

Volatile

Supply Voltage-Max (Vsup) :

1.9V

Clock Frequency :

400MHz

Memory Format :

DRAM

Organization :

64MX16

Number of Terminations :

84

Sequential Burst Length :

48

Voltage - Supply :

1.7V~1.9V

Package / Case :

84-TFBGA

Surface Mount :

yes

Number of Functions :

1

JESD-30 Code :

R-PBGA-B84