IS43DR16320D-3DBL
- Mfr.Part #
- IS43DR16320D-3DBL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 84-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 84TWBGA
- Stock
- 10
- In Stock :
- 10
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Size :
- 512Mb 32M x 16
- Terminal Pitch :
- 0.8mm
- Supply Voltage-Min (Vsup) :
- 1.7V
- Number of Ports :
- 1
- Interleaved Burst Length :
- 48
- Supply Current-Max :
- 0.23mA
- Package / Case :
- 84-TFBGA
- Length :
- 12.5mm
- Memory Density :
- 536870912 bit
- Height Seated (Max) :
- 1.2mm
- Write Cycle Time - Word, Page :
- 15ns
- HTS Code :
- 8542.32.00.28
- Access Time :
- 450ps
- I/O Type :
- COMMON
- Operating Mode :
- SYNCHRONOUS
- Width :
- 8mm
- Memory Interface :
- Parallel
- Terminal Finish :
- TIN SILVER COPPER
- Qualification Status :
- Not Qualified
- Number of Terminations :
- 84
- Packaging :
- Tray
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Operating Temperature :
- 0°C~70°C TA
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e1
- Sequential Burst Length :
- 48
- Standby Current-Max :
- 0.025A
- Supply Voltage :
- 1.8V
- ECCN Code :
- EAR99
- Additional Feature :
- PROGRAMMABLE CAS LATENCY
- Voltage - Supply :
- 1.7V~1.9V
- Surface Mount :
- yes
- Supply Voltage-Max (Vsup) :
- 1.9V
- Power Supplies :
- 1.8V
- Clock Frequency :
- 333MHz
- JESD-30 Code :
- R-PBGA-B84
- Refresh Cycles :
- 8192
- Memory Format :
- DRAM
- Output Characteristics :
- 3-STATE
- Memory Width :
- 16
- Number of Functions :
- 1
- Organization :
- 32MX16
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Factory Lead Time :
- 8 Weeks
- Memory Type :
- Volatile
- Datasheets
- IS43DR16320D-3DBL
Memory Integrated Silicon Solution, Inc. IS43DR16320D-3DBL Overview
The IS43DR16320D-3DBL is a high-performance 512Mbit DRAM from Integrated Silicon Solution, Inc. (ISSI). This device, in an 84-TWBGA package, offers parallel data access and is designed for a wide range of applications requiring fast and reliable memory solutions. With its significant memory capacity and reliable design, this module is ideal for various industries, providing enhanced performance and stability. It is built to meet the rigorous demands of modern technology, making it an excellent choice for manufacturers and developers seeking high-quality memory solutions. The Memory Integrated Silicon Solution, Inc. IS43DR16320D-3DBL is recognized for its efficient data handling, low latency, and high throughput, contributing to improved system performance and overall efficiency.
IS43DR16320D-3DBL Features
- Parallel 512Mbit DRAM for high-speed data transfer.
- 84-TWBGA package ensuring compact and robust design.
- Low latency and high throughput for optimal system performance.
- Reliability and durability, suitable for demanding environments.
- Compatible with a variety of system architectures.
IS43DR16320D-3DBL Applications
- Embedded Systems: The IS43DR16320D-3DBL is ideal for embedded systems requiring reliable memory for high-speed data processing.
- Consumer Electronics: This DRAM is suitable for consumer electronics where performance and reliability are critical, such as smart TVs and gaming consoles.
- Networking Equipment: The memory's high throughput makes it a great choice for networking devices that handle large data volumes.
- Automotive Electronics: It can be used in automotive applications where stable memory performance is essential for vehicle systems.
- Industrial Automation: The IS43DR16320D-3DBL is suitable for industrial automation equipment, providing consistent performance in challenging environments.
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