IS43DR16320D-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Supply Current-Max :

0.25mA

ECCN Code :

EAR99

Voltage - Supply :

1.7V~1.9V

Terminal Position :

BOTTOM

HTS Code :

8542.32.00.28

Qualification Status :

Not Qualified

Write Cycle Time - Word, Page :

15ns

RoHS Status :

ROHS3 Compliant

Width :

8mm

Sequential Burst Length :

48

Access Time :

400ps

Number of Functions :

1

Clock Frequency :

400MHz

Memory Interface :

Parallel

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Output Characteristics :

3-STATE

Number of Ports :

1

Memory Format :

DRAM

Terminal Pitch :

0.8mm

Operating Mode :

SYNCHRONOUS

Memory Width :

16

Organization :

32MX16

Surface Mount :

yes

JESD-30 Code :

R-PBGA-B84

Standby Current-Max :

0.025A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supply Voltage :

1.8V

Memory Size :

512Mb 32M x 16

Memory Density :

536870912 bit

Terminal Finish :

TIN SILVER COPPER

Interleaved Burst Length :

48

Supply Voltage-Max (Vsup) :

1.9V

I/O Type :

COMMON

Factory Lead Time :

8 Weeks

Length :

12.5mm

Number of Terminations :

84

Refresh Cycles :

8192

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Operating Temperature :

0°C~70°C TA

Memory Type :

Volatile

Power Supplies :

1.8V

Height Seated (Max) :

1.2mm

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Package / Case :

84-TFBGA

JESD-609 Code :

e1

Additional Feature :

PROGRAMMABLE CAS LATENCY