IS43DR16320C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Operating Temperature :

-40°C~85°C TA

Write Cycle Time - Word, Page :

15ns

Operating Supply Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

84

Length :

12.5mm

Density :

512 Mb

Supply Voltage-Max (Vsup) :

1.9V

Memory Type :

Volatile

Factory Lead Time :

8 Weeks

Memory Size :

512Mb 32M x 16

I/O Type :

COMMON

Packaging :

Tray

Additional Feature :

AUTO/SELF REFRESH

Number of Ports :

1

Nominal Supply Current :

250mA

Mount :

Surface Mount

Standby Current-Max :

0.011A

Terminal Pitch :

0.8mm

Supply Voltage-Min (Vsup) :

1.7V

Organization :

32MX16

Supply Voltage :

1.8V

Number of Pins :

84

Memory Interface :

Parallel

Memory Width :

16

Voltage - Supply :

1.7V~1.9V

Output Characteristics :

3-STATE

Memory Format :

DRAM

Package / Case :

84-TFBGA

Mounting Type :

Surface Mount

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Access Time :

450ps

Address Bus Width :

15b

Interleaved Burst Length :

48

Sequential Burst Length :

48

RoHS Status :

ROHS3 Compliant

Data Bus Width :

16b

Clock Frequency :

333MHz

Number of Functions :

1

Radiation Hardening :

No