IS43DR16160B-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

RoHS Status :

ROHS3 Compliant

Operating Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Number of Terminations :

84

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Memory Type :

Volatile

JESD-609 Code :

e1

Interleaved Burst Length :

48

Clock Frequency :

333MHz

Memory Width :

16

Memory Format :

DRAM

Terminal Pitch :

0.8mm

Memory Size :

256Mb 16M x 16

Write Cycle Time - Word, Page :

15ns

Height Seated (Max) :

1.2mm

Voltage - Supply :

1.7V~1.9V

Mounting Type :

Surface Mount

Packaging :

Tray

Supply Voltage :

1.8V

Mount :

Surface Mount

Package / Case :

84-TFBGA

Standby Current-Max :

0.025A

Number of Pins :

84

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Time@Peak Reflow Temperature-Max (s) :

10

Density :

256 Mb

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

1.9V

Output Characteristics :

3-STATE

Data Bus Width :

16b

Operating Temperature :

-40°C~85°C TA

Organization :

16MX16

Supply Voltage-Min (Vsup) :

1.7V

Access Time :

450ps

Peak Reflow Temperature (Cel) :

260

Refresh Cycles :

8192

Operating Mode :

SYNCHRONOUS

Terminal Finish :

TIN SILVER COPPER

I/O Type :

COMMON

Address Bus Width :

13b

Factory Lead Time :

8 Weeks

Number of Ports :

1

Additional Feature :

AUTO/SELF REFRESH

Nominal Supply Current :

250mA

Length :

12.5mm

Sequential Burst Length :

48

HTS Code :

8542.32.00.24