IS43DR16160A-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Address Bus Width :

15b

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Additional Feature :

AUTO/SELF REFRESH

Standby Current-Max :

0.005A

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Access Time :

450ps

Output Characteristics :

3-STATE

HTS Code :

8542.32.00.24

Write Cycle Time - Word, Page :

15ns

Nominal Supply Current :

330mA

Number of Functions :

1

Supply Voltage :

1.8V

Data Bus Width :

16b

Density :

256 Mb

Voltage - Supply :

1.7V~1.9V

Mounting Type :

Surface Mount

Length :

12.5mm

Clock Frequency :

333MHz

Memory Format :

DRAM

Memory Size :

256Mb 16M x 16

Packaging :

Tray

Operating Supply Voltage :

1.8V

Supply Voltage-Max (Vsup) :

1.9V

Terminal Position :

BOTTOM

Package / Case :

84-TFBGA

I/O Type :

COMMON

Pin Count :

84

Number of Pins :

84

Supply Voltage-Min (Vsup) :

1.7V

Sequential Burst Length :

48

Interleaved Burst Length :

48

Memory Interface :

Parallel

Memory Type :

Volatile

Peak Reflow Temperature (Cel) :

260

Height Seated (Max) :

1.2mm

Refresh Cycles :

8192

Mount :

Surface Mount

Organization :

16MX16

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

0°C~70°C TA

Number of Ports :

1

Terminal Pitch :

0.8mm

ECCN Code :

EAR99

Memory Width :

16

Pbfree Code :

yes

Number of Terminations :

84

JESD-609 Code :

e1

Time@Peak Reflow Temperature-Max (s) :

40