IS42S32400E-6BLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e1

Peak Reflow Temperature (Cel) :

260

Clock Frequency :

166MHz

Pin Count :

90

Refresh Cycles :

4096

Package / Case :

90-TFBGA

Pbfree Code :

yes

Packaging :

Tray

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Position :

BOTTOM

Sequential Burst Length :

1248FP

Supply Voltage-Min (Vsup) :

3V

Time@Peak Reflow Temperature-Max (s) :

10

Memory Type :

Volatile

Radiation Hardening :

No

Mounting Type :

Surface Mount

Memory Interface :

Parallel

Memory Format :

DRAM

Height Seated (Max) :

1.2mm

Number of Terminations :

90

Standby Current-Max :

0.001A

Number of Ports :

1

Mount :

Surface Mount

Operating Supply Voltage :

3.3V

Data Bus Width :

32b

Number of Pins :

90

Supply Voltage-Max (Vsup) :

3.6V

HTS Code :

8542.32.00.02

RoHS Status :

RoHS Compliant

Supply Voltage :

3.3V

Number of Functions :

1

Voltage - Supply :

3V~3.6V

Memory Size :

128Mb 4M x 32

Interleaved Burst Length :

1248

Memory Width :

32

Additional Feature :

AUTO/SELF REFRESH

Density :

128 Mb

ECCN Code :

EAR99

Nominal Supply Current :

180mA

Output Characteristics :

3-STATE

Organization :

4MX32

Terminal Pitch :

0.8mm

Address Bus Width :

14b

Operating Temperature :

-40°C~85°C TA

Length :

13mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Access Time :

5.4ns

I/O Type :

COMMON