IS42S16160B-6B
- Mfr.Part #
- IS42S16160B-6B
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 54-LFBGA
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PARALLEL 54LFBGA
- Stock
- 49,457
- In Stock :
- 49,457
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Terminal Position :
- BOTTOM
- RoHS Status :
- Non-RoHS Compliant
- Supply Voltage-Max (Vsup) :
- 3.6V
- Sequential Burst Length :
- 1248FP
- Number of Terminations :
- 54
- Number of Functions :
- 1
- Supply Voltage-Min (Vsup) :
- 3V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Access Time :
- 5.4ns
- Additional Feature :
- AUTO/SELF REFRESH
- Nominal Supply Current :
- 180mA
- Package / Case :
- 54-LFBGA
- Refresh Cycles :
- 8192
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Output Characteristics :
- 3-STATE
- Memory Width :
- 16
- Memory Interface :
- Parallel
- Height Seated (Max) :
- 1mm
- Supply Voltage :
- 3.3V
- I/O Type :
- COMMON
- Mount :
- Surface Mount
- Voltage - Supply :
- 3V~3.6V
- Number of Ports :
- 1
- Memory Size :
- 256Mb 16M x 16
- Memory Type :
- Volatile
- Number of Pins :
- 54
- Memory Format :
- DRAM
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Length :
- 13mm
- Density :
- 256 Mb
- Clock Frequency :
- 166MHz
- ECCN Code :
- EAR99
- Packaging :
- Tray
- Operating Mode :
- SYNCHRONOUS
- Operating Supply Voltage :
- 3.3V
- Peak Reflow Temperature (Cel) :
- 260
- Interleaved Burst Length :
- 1248
- Data Bus Width :
- 16b
- Mounting Type :
- Surface Mount
- Qualification Status :
- Not Qualified
- Organization :
- 16MX16
- Address Bus Width :
- 15b
- Standby Current-Max :
- 0.001A
- Operating Temperature :
- 0°C~70°C TA
- Pin Count :
- 54
- Terminal Pitch :
- 0.8mm
- JESD-609 Code :
- e1
- Datasheets
- IS42S16160B-6B
Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160B-6B Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS42S16160B-6B is a high-performance IC DRAM designed to meet the rigorous demands of various advanced digital applications. Boasting a capacity of 256Mbit and utilizing a parallel interface, this IC is encapsulated in a compact 54LFBGA package, offering robust data storage and retrieval capabilities. Its design is optimized for efficiency, making it an ideal choice for manufacturers looking to enhance system performance while maintaining cost-effectiveness and reliability in their products.
IS42S16160B-6B Features
This DRAM IC features a 256Mbit capacity, with high-speed operation and a parallel interface for efficient data handling. The 54LFBGA packaging not only reduces the physical footprint but also enhances the thermal and electrical performance, making it suitable for tightly packed system designs. The device operates at a nominal power supply voltage of 3.3V, further highlighting its suitability for low-power applications.
IS42S16160B-6B Applications
- Automotive Systems: Utilized in advanced driver-assistance systems (ADAS) to process and store large amounts of data in real time.
- Telecommunications: Serves as a buffer memory in telecom infrastructure, enabling efficient data flow management and storage for improved communication services.
- Consumer Electronics: Integrated into multimedia devices such as smart TVs and gaming consoles for enhanced graphics and user experience.
- Industrial Automation: Critical for data logging and process control in automated manufacturing systems, ensuring high reliability and performance consistency.
- Mobile Devices: Used in smartphones and tablets to handle increased memory requirements for applications and multitasking environments.
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