IS41LV16100B-60KL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Format :

DRAM

Refresh Cycles :

1024

Voltage - Supply :

3V~3.6V

Terminal Finish :

Matte Tin (Sn) - annealed

Operating Temperature :

0°C~70°C TA

Memory Size :

16Mb 1M x 16

Nominal Supply Current :

170mA

I/O Type :

COMMON

Output Characteristics :

3-STATE

Operating Mode :

ASYNCHRONOUS

Supply Voltage :

3.3V

Number of Functions :

1

Height Seated (Max) :

3.75mm

Self Refresh :

No

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Package / Case :

42-BSOJ (0.400, 10.16mm Width)

Qualification Status :

Not Qualified

Number of Ports :

1

Organization :

1MX16

RoHS Status :

RoHS Compliant

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

3.6V

Supply Voltage-Min (Vsup) :

3V

Access Time :

30ns

Pin Count :

42

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Pbfree Code :

yes

JESD-609 Code :

e3

Number of Pins :

42

Moisture Sensitivity Level (MSL) :

2 (1 Year)

ECCN Code :

EAR99

Address Bus Width :

10b

Packaging :

Tube

Memory Width :

16

Additional Feature :

RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH

Density :

16 Mb

Number of Terminations :

42

Data Bus Width :

16b

Terminal Position :

Dual

Terminal Pitch :

1.27mm

Length :

27.305mm

Operating Supply Voltage :

3.3V

Memory Type :

Volatile

Standby Current-Max :

0.002A