IS25WP512M-RMLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Technology :

FLASH - NOR

Surface Mount :

yes

Programming Voltage :

1.8 V

Supply Voltage-Min (Vsup) :

1.65 V

Seated Height-Max :

2.65 mm

Length :

10.31 mm

Memory Interface :

SPI - Quad I/O, QPI, DTR

Memory Size :

512Mbit

Organization :

64MX8

ECCN Code :

3A991.B.1.A

Package :

Tube

Memory Type :

Non-Volatile

Memory Format :

Flash

Memory Width :

8

Temperature Grade :

Industrial

Operating Temperature :

-40°C ~ 105°C (TA)

Alternate Memory Width :

1

JESD-609 Code :

e3

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Reach Compliance Code :

Compliant

Terminal Finish :

Tin (Sn)

Clock Frequency :

133 MHz

Number of Words :

67108864 words

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PDSO-G16

Package Shape :

RECTANGULAR

Terminal Position :

Dual

HTS Code :

8542.32.00.51

Supplier Device Package :

16-SOIC

Width :

7.49 mm

Product Status :

Obsolete

Write Cycle Time - Word, Page :

50μs, 2ms

Memory Organization :

64M x 8

Manufacturer :

Integrated Silicon Solution Inc

Factory Lead Time :

10 Weeks

Parallel/Serial :

Serial

Memory IC Type :

Flash

Terminal Form :

Gull wing

Supply Voltage-Max (Vsup) :

1.95 V

Series :

-

Mounting Type :

Surface Mount

Number of Terminals :

16

Terminal Pitch :

1.27 mm

Number of Functions :

1

Voltage - Supply :

1.7V ~ 1.95V

Memory Density :

536870912 bit

Operating Mode :

SYNCHRONOUS