IS25WP016D-JNLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Voltage - Supply :

1.65V~1.95V

Time@Peak Reflow Temperature-Max (s) :

10

Supply Voltage-Max (Vsup) :

1.95V

Length :

4.9mm

Organization :

2MX8

Supply Voltage-Min (Vsup) :

1.65V

Terminal Finish :

Tin (Sn)

Parallel/Serial :

Serial

Factory Lead Time :

8 Weeks

Number of Terminations :

8

Width :

3.9mm

Terminal Position :

Dual

Memory Interface :

SPI - Quad I/O, QPI, DTR

Write Cycle Time - Word, Page :

800µs

Package / Case :

8-SOIC (0.154, 3.90mm Width)

RoHS Status :

ROHS3 Compliant

Memory Width :

8

Programming Voltage :

1.8V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-40°C~105°C TA

Memory Size :

16Mb 2M x 8

Memory Density :

16777216 bit

Operating Mode :

SYNCHRONOUS

Number of Functions :

1

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

260

Terminal Pitch :

1.27mm

Clock Frequency :

133MHz

JESD-609 Code :

e3

Memory Type :

Non-Volatile

Height Seated (Max) :

1.75mm

Supply Voltage :

1.8V

HTS Code :

8542.32.00.51

Packaging :

Tube

Surface Mount :

yes

Memory Format :

Flash

Alternate Memory Width :

1