IS25LP512M-RMLE

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Width :

8

Number of Terminations :

16

Supply Voltage-Min (Vsup) :

2.3V

Supply Voltage :

3V

Surface Mount :

yes

Write Cycle Time - Word, Page :

1.6ms

Memory Type :

Non-Volatile

Terminal Position :

Dual

Memory Format :

Flash

JESD-30 Code :

R-PDSO-G16

Peak Reflow Temperature (Cel) :

260

Terminal Pitch :

1.27mm

Supply Voltage-Max (Vsup) :

3.6V

Memory Size :

512Mb 64M x 8

Organization :

64MX8

Package / Case :

16-SOIC (0.295, 7.50mm Width)

Terminal Finish :

Tin (Sn)

Parallel/Serial :

Serial

ECCN Code :

3A991.B.1.A

Alternate Memory Width :

1

HTS Code :

8542.32.00.51

Width :

7.49mm

Memory Density :

536870912 bit

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~105°C TA

Number of Functions :

1

Clock Frequency :

133MHz

Voltage - Supply :

2.3V~3.6V

Operating Mode :

SYNCHRONOUS

Memory Interface :

SPI - Quad I/O, QPI, DTR

Packaging :

Tube

Length :

10.31mm

RoHS Status :

ROHS3 Compliant

Programming Voltage :

3V

Factory Lead Time :

8 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Height Seated (Max) :

2.65mm