IRLTS2242TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Number of Elements :

1

Number of Pins :

6

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.1V @ 10μA

REACH SVHC :

No SVHC

Element Configuration :

Single

Width :

1.75mm

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

-20V

Package / Case :

SOT-23-6

Length :

3mm

Published :

2009

Lead Free :

Lead Free

Power Dissipation-Max :

2W Ta

Current - Continuous Drain (Id) @ 25°C :

6.9A Ta

Number of Terminations :

6

Contact Plating :

Tin

FET Type :

P-Channel

Vgs (Max) :

±12V

Pulsed Drain Current-Max (IDM) :

55A

Rise Time :

18ns

Operating Mode :

ENHANCEMENT MODE

Height :

1.3mm

Threshold Voltage :

-400mV

Turn-Off Delay Time :

18 ns

Fall Time (Typ) :

68 ns

Transistor Element Material :

SILICON

Turn On Delay Time :

5.8 ns

Power Dissipation :

2W

Drain to Source Voltage (Vdss) :

20V

ECCN Code :

EAR99

Continuous Drain Current (ID) :

6.9A

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Rds On (Max) @ Id, Vgs :

32m Ω @ 6.9A, 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

905pF @ 10V

Series :

HEXFET®

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

55mOhm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ