IRL540PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

77m Ω @ 17A, 5V

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

64nC @ 5V

Package / Case :

TO-220-3

Terminal Finish :

MATTE TIN

Vgs(th) (Max) @ Id :

2V @ 250μA

Height :

8.76mm

Mount :

Through Hole

Continuous Drain Current (ID) :

28A

Operating Mode :

ENHANCEMENT MODE

Resistance :

77mOhm

Pbfree Code :

yes

Threshold Voltage :

2V

Transistor Application :

SWITCHING

Length :

10.54mm

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Number of Pins :

3

Pin Count :

3

REACH SVHC :

Unknown

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

2200pF @ 25V

Factory Lead Time :

8 Weeks

Width :

4.7mm

Number of Terminations :

3

Weight :

6.000006g

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

JESD-609 Code :

e3

Published :

2011

FET Type :

N-Channel

Number of Channels :

1

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Fall Time (Typ) :

80 ns

Nominal Vgs :

2 V

Turn On Delay Time :

8.5 ns

Power Dissipation :

150W

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Radiation Hardening :

No

Power Dissipation-Max :

150W Tc

Recovery Time :

260 ns

Gate to Source Voltage (Vgs) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

35 ns

Element Configuration :

Single

Rise Time :

170ns

Vgs (Max) :

±10V

Lead Free :

Lead Free

Avalanche Energy Rating (Eas) :

440 mJ

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1