IRL540NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2V @ 250μA

Published :

1998

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Number of Elements :

1

Qualification Status :

Not Qualified

Power Dissipation-Max :

3.8W Ta 140W Tc

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

120A

Terminal Form :

Gull wing

Factory Lead Time :

7 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Vgs (Max) :

±16V

Avalanche Energy Rating (Eas) :

310 mJ

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Case Connection :

DRAIN

Packaging :

Tube

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

44m Ω @ 18A, 10V

Gate Charge (Qg) (Max) @ Vgs :

74nC @ 5V

Drain-source On Resistance-Max :

0.053Ohm

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

36A

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V