IRL520NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Surface Mount :

yes

Operating Temperature :

-55°C~175°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

85 mJ

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 25V

Drain to Source Voltage (Vdss) :

100V

Rds On (Max) @ Id, Vgs :

180m Ω @ 6A, 10V

Series :

HEXFET®

Number of Terminations :

2

Vgs (Max) :

±16V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Drain Current-Max (Abs) (ID) :

10A

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V

Terminal Position :

Single

Pulsed Drain Current-Max (IDM) :

35A

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Vgs(th) (Max) @ Id :

2V @ 250μA

Published :

1998

Drain-source On Resistance-Max :

0.22Ohm

Case Connection :

DRAIN

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

3.8W Ta 48W Tc