IRFSL7530PBF
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- Mfr.Part #
- IRFSL7530PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 195A TO262
- Stock
- 48
- In Stock ：
- 48
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- REACH SVHC :
- No SVHC
- Input Capacitance (Ciss) (Max) @ Vds :
- 13703pF @ 25V
- Continuous Drain Current (ID) :
- 195A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 12 Weeks
- Packaging :
- Tube
- Pulsed Drain Current-Max (IDM) :
- 760A
- Vgs(th) (Max) @ Id :
- 3.7V @ 250μA
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Published :
- 2004
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.002Ohm
- Mount :
- Surface Mount, Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 375W Tc
- Turn-Off Delay Time :
- 172 ns
- Rise Time :
- 141ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 195A Tc
- Series :
- HEXFET®, StrongIRFET™
- Power Dissipation :
- 375W
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 411nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- Turn On Delay Time :
- 52 ns
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 100A, 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Drain to Source Breakdown Voltage :
- 60V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Threshold Voltage :
- 3.7V
- FET Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 2.084002g
- Fall Time (Typ) :
- 104 ns
- Datasheets
- IRFSL7530PBF
N-Channel Tube 2m Ω @ 100A, 10V ±20V 13703pF @ 25V 411nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRFSL7530PBF Overview
The maximum input capacitance of this device is 13703pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 195A.When VGS=60V, and ID flows to VDS at 60VVDS, the drain-source breakdown voltage is 60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 172 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 760A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 52 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3.7V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.
IRFSL7530PBF Features
a continuous drain current (ID) of 195A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 172 ns
based on its rated peak drain current 760A.
a threshold voltage of 3.7V
IRFSL7530PBF Applications
There are a lot of Infineon Technologies
IRFSL7530PBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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