IRFSL7530PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

195A

Turn-Off Delay Time :

172 ns

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.002Ohm

Power Dissipation :

375W

Published :

2004

REACH SVHC :

No SVHC

Fall Time (Typ) :

104 ns

Number of Pins :

3

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

195A Tc

Number of Terminations :

3

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

760A

Vgs(th) (Max) @ Id :

3.7V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Weight :

2.084002g

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Threshold Voltage :

3.7V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

60V

Turn On Delay Time :

52 ns

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

13703pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Number of Channels :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Case Connection :

DRAIN

Mount :

Surface Mount, Through Hole

Gate Charge (Qg) (Max) @ Vgs :

411nC @ 10V

Rise Time :

141ns

Power Dissipation-Max :

375W Tc

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Series :

HEXFET®, StrongIRFET™

FET Type :

N-Channel