IRFC4019EB

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Core identification :

Numbers

Min. permitted bending radius, moving application with forced guidance :

141

FET Type :

N-Channel

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

-

Package :

Bulk

Outer diameter approx. :

18.8

Min. permitted bending radius, moving application/free movement :

141

Material outer sheath :

Polyvinyl Chloride (PVC)

Min. permitted bending radius, stationary application/permanent installation :

75.2

Stranding element :

No

Current - Continuous Drain (Id) @ 25°C :

17A

Halogen free according to IEC 60754-2 :

No

Power Dissipation (Max) :

-

Colour outer sheath :

Grey

Low smoke according to IEC 61034-2 :

No

Low smoke (according to EN 61034-2) :

No

Nominal voltage U :

500

Flame retardant :

According to IEC/EN 60332-1-2

Conductor surface :

Bare

Vgs (Max) :

-

Technology :

MOSFET (Metal Oxide)

Operating Temperature :

-

Material core insulation :

Polyvinyl Chloride (PVC)

Vgs(th) (Max) @ Id :

-

Mounting Type :

Surface Mount

FET Feature :

-

Supplier Device Package :

Die

Drain to Source Voltage (Vdss) :

150 V

Permitted cable outer temperature after assembling without vibration :

-40 - 80

Package / Case :

Die

Conductor category :

Class E = very flexible

Nominal cross section conductor :

1

Screen over stranding :

Braiding

Screen over stranding element :

NONE

Series :

HEXFET®

Drive Voltage (Max Rds On, Min Rds On) :

-

Permitted cable outer temperature during assembling/handling :

0 - 70