IRCZ34PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Supplier Device Package :

TO-220-5

Continuous Drain Current (ID) :

30A

Rise Time :

100ns

Published :

1997

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Width :

4.83mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-220-5

Weight :

3.000003g

Operating Temperature :

-55°C~175°C TJ

Turn-Off Delay Time :

29 ns

FET Feature :

Current Sensing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

50mOhm @ 18A, 10V

Fall Time (Typ) :

52 ns

Height :

9.02mm

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 25V

Power Dissipation-Max :

88W Tc

Mounting Type :

Through Hole

Min Operating Temperature :

-55°C

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Rds On Max :

50 mΩ

Vgs(th) (Max) @ Id :

4V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

30A Tc

FET Type :

N-Channel

Max Operating Temperature :

175°C

Input Capacitance :

1.3nF

Length :

10.67mm

Drain to Source Resistance :

50mOhm

Packaging :

Tube

Number of Channels :

1