IRC730PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

1Ohm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

38 ns

Power Dissipation-Max :

74W Tc

Terminal Finish :

MATTE TIN

Reach Compliance Code :

Unknown

Published :

1997

Mount :

Through Hole

Width :

4.83mm

Package / Case :

TO-220-5

Rise Time :

15ns

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Weight :

3.000003g

Drain to Source Breakdown Voltage :

400V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

FET Feature :

Current Sensing

Continuous Drain Current (ID) :

5.5A

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Configuration :

Single

Vgs (Max) :

±20V

Height :

9.02mm

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

FET Type :

N-Channel

Fall Time (Typ) :

14 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

10.67mm

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Number of Elements :

1

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Turn On Delay Time :

18 ns

Number of Terminations :

5

Pulsed Drain Current-Max (IDM) :

22A

JESD-30 Code :

R-PSFM-T5

Number of Channels :

1

Transistor Element Material :

SILICON

Pin Count :

5

Transistor Application :

SWITCHING

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

40