IR2233PBF
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- Mfr.Part #
- IR2233PBF
- Manufacturer
- International Rectifier
- Package / Case
- 28-DIP (0.600, 15.24mm)
- Datasheet
- Download
- Description
- IR2233 - GATE DRIVER
- Stock
- 20,112
- In Stock ：
- 20,112
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- Manufacturer :
- International Rectifier
- Product Category :
- Gate Drivers
- Mount :
- Through Hole
- Rise Time :
- 150ns
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 750 ns
- Supply Voltage :
- 15V
- Turn Off Time :
- 0.95 μs
- High Side Voltage - Max (Bootstrap) :
- 1200V
- High Side Driver :
- yes
- Packaging :
- Tube
- Base Part Number :
- IR2233PBF
- Input Type :
- Inverting
- Max Power Dissipation :
- 1.5W
- Fall Time (Typ) :
- 70 ns
- Resistance :
- 100Ohm
- Output Current :
- 200mA
- Terminal Position :
- Dual
- Voltage - Supply :
- 10V~20V
- Number of Terminations :
- 28
- Height :
- 5.96mm
- Power Dissipation :
- 1.5W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time :
- 1 μs
- Terminal Pitch :
- 2.54mm
- HTS Code :
- 8542.39.00.01
- Length :
- 39.7256mm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Width :
- 14.73mm
- Package / Case :
- 28-DIP (0.600, 15.24mm)
- Power Supplies :
- 15V
- Factory Lead Time :
- 12 Weeks
- Lead Free :
- Lead Free
- Output Peak Current Limit-Nom :
- 0.5A
- Current - Peak Output (Source, Sink) :
- 250mA 500mA
- Channel Type :
- 3-Phase
- Driven Configuration :
- Half-Bridge
- Rise / Fall Time (Typ) :
- 90ns 40ns
- Qualification Status :
- Not Qualified
- Max Output Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Functions :
- 3
- Logic Voltage - VIL, VIH :
- 0.8V 2V
- Gate Type :
- IGBT, N-Channel MOSFET
- Operating Temperature :
- 125°C TJ
- ECCN Code :
- EAR99
- Published :
- 1996
- Number of Pins :
- 28
- Number of Outputs :
- 6
- Turn-Off Delay Time :
- 950 ns
- Datasheets
- IR2233PBF
[Gate Drivers International Rectifier IR2233PBF] Overview
The Gate Drivers IR2233PBF, manufactured by International Rectifier, are essential components designed to facilitate the efficient operation of power semiconductor devices in various applications. Engineered with precision and reliability in mind, these gate drivers ensure optimal performance and longevity, making them ideal for demanding industrial and commercial environments.
Featuring advanced technology and robust construction, the IR2233PBF gate drivers offer superior control and protection for power transistors and MOSFETs, enhancing the overall efficiency and safety of electronic systems. Whether used in motor control, power supplies, or renewable energy systems, these gate drivers deliver consistent and precise signal transmission, enabling seamless operation and optimal energy utilization.
IR2233PBF Features
- High-performance gate driver
- Designed for power semiconductor devices
- Advanced control and protection features
- Robust construction for durability
- Wide range of operating voltages
- Integrated fault detection mechanisms
- Optimized for industrial applications
IR2233PBF Applications
- Motor Control Systems: The IR2233PBF gate drivers play a crucial role in controlling the speed and direction of electric motors in various industrial and automotive applications. With their precise signal transmission and fault detection capabilities, they ensure smooth and efficient motor operation, enhancing productivity and reliability.
- Power Supplies: In power supply units, the IR2233PBF gate drivers enable precise switching of power transistors, ensuring stable output voltages and efficient power conversion. Their robust construction and integrated protection features make them suitable for high-performance power supply designs in telecommunications, data centers, and other critical infrastructure.
- Renewable Energy Systems: Whether used in solar inverters, wind turbines, or battery management systems, the IR2233PBF gate drivers provide reliable control and protection for power semiconductor devices. By maximizing energy conversion efficiency and ensuring system reliability, they contribute to the widespread adoption of renewable energy technologies and sustainable power generation.
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