IR2011SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Interface IC Type :

HALF BRIDGE BASED MOSFET DRIVER

Channel Type :

Independent

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Turn On Delay Time :

20 ns

Gate Type :

N-Channel MOSFET

Turn-Off Delay Time :

20 ns

Mount :

Surface Mount

Terminal Position :

Dual

Number of Pins :

8

Current - Peak Output (Source, Sink) :

1A 1A

Power Supplies :

15V

Max Power Dissipation :

625mW

Propagation Delay :

80 ns

Moisture Sensitivity Level (MSL) :

2 (1 Year)

High Side Voltage - Max (Bootstrap) :

200V

Lead Free :

Lead Free

Input Type :

Inverting

Release Time :

60 ns

Radiation Hardening :

No

Operating Supply Current :

230μA

Logic Voltage - VIL, VIH :

0.7V 2.2V

Factory Lead Time :

12 Weeks

Operating Temperature :

-40°C~150°C TJ

Max Supply Current :

230μA

Output Voltage :

10V

Published :

1996

Number of Terminations :

8

Fall Time (Typ) :

35 ns

High Side Driver :

yes

Output Current :

1A

Width :

3.9878mm

Voltage - Supply :

10V~20V

RoHS Status :

ROHS3 Compliant

Max Output Current :

1A

REACH SVHC :

No SVHC

Number of Functions :

1

Height :

1.4986mm

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Packaging :

Tube

Nominal Supply Current :

230μA

Power Dissipation :

625mW

Rise Time :

50ns

Driven Configuration :

High-Side or Low-Side

Length :

4.9784mm

Terminal Finish :

Matte Tin (Sn)

Weight :

540.001716mg

Supply Voltage :

15V

Base Part Number :

IR2011SPBF

Output Peak Current Limit-Nom :

1A

Number of Outputs :

2

Rise / Fall Time (Typ) :

35ns 20ns