IR2011SPBF

Manufacturer :

Infineon Technologies

Product Category :

Gate Drivers

Voltage - Supply :

10V~20V

High Side Driver :

yes

Published :

1996

Propagation Delay :

80 ns

RoHS Status :

ROHS3 Compliant

Number of Outputs :

2

Number of Terminations :

8

Output Peak Current Limit-Nom :

1A

Number of Functions :

1

Gate Type :

N-Channel MOSFET

Base Part Number :

IR2011SPBF

Mount :

Surface Mount

Power Dissipation :

625mW

Output Current :

1A

Peak Reflow Temperature (Cel) :

260

Number of Pins :

8

JESD-609 Code :

e3

Input Type :

Inverting

Turn On Delay Time :

20 ns

Packaging :

Tube

Width :

3.9878mm

Time@Peak Reflow Temperature-Max (s) :

30

Max Supply Current :

230μA

Power Supplies :

15V

Driven Configuration :

High-Side or Low-Side

Interface IC Type :

HALF BRIDGE BASED MOSFET DRIVER

Fall Time (Typ) :

35 ns

Release Time :

60 ns

Rise / Fall Time (Typ) :

35ns 20ns

Supply Voltage :

15V

Logic Voltage - VIL, VIH :

0.7V 2.2V

Turn-Off Delay Time :

20 ns

Channel Type :

Independent

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Radiation Hardening :

No

Mounting Type :

Surface Mount

Rise Time :

50ns

Terminal Form :

Gull wing

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Terminal Position :

Dual

Max Output Current :

1A

High Side Voltage - Max (Bootstrap) :

200V

Height :

1.4986mm

Nominal Supply Current :

230μA

Terminal Finish :

Matte Tin (Sn)

Output Voltage :

10V

Factory Lead Time :

12 Weeks

Current - Peak Output (Source, Sink) :

1A 1A

Length :

4.9784mm

Lead Free :

Lead Free

Operating Temperature :

-40°C~150°C TJ

Max Power Dissipation :

625mW

Weight :

540.001716mg

Operating Supply Current :

230μA