IR2011PBF
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- Mfr.Part #
- IR2011PBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-DIP (0.300, 7.62mm)
- Datasheet
- Download
- Description
- IC GATE DRV HI-SIDE/LO-SIDE 8DIP
- Stock
- 7,227
- In Stock ：
- 7,227
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Gate Drivers
- ECCN Code :
- EAR99
- Number of Functions :
- 1
- Radiation Hardening :
- No
- Width :
- 7.11mm
- Number of Outputs :
- 2
- Driven Configuration :
- High-Side or Low-Side
- Output Peak Current Limit-Nom :
- 1A
- High Side Driver :
- yes
- Base Part Number :
- IR2011PBF
- Turn On Delay Time :
- 20 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Number of Pins :
- 8
- Max Supply Current :
- 230μA
- Length :
- 10.8966mm
- Height :
- 4.9276mm
- Factory Lead Time :
- 12 Weeks
- Supply Voltage :
- 15V
- Voltage - Supply :
- 10V~20V
- Rise / Fall Time (Typ) :
- 35ns 20ns
- Max Output Voltage :
- 20V
- Gate Type :
- N-Channel MOSFET
- Published :
- 1996
- Propagation Delay :
- 80 ns
- Package / Case :
- 8-DIP (0.300, 7.62mm)
- Power Dissipation :
- 1W
- Logic Voltage - VIL, VIH :
- 0.7V 2.2V
- Termination :
- Through Hole
- Min Output Voltage :
- 10V
- Number of Terminations :
- 8
- Max Output Current :
- 1A
- RoHS Status :
- ROHS3 Compliant
- Output Voltage :
- 220V
- Input Type :
- Inverting
- Nominal Supply Current :
- 230μA
- Channel Type :
- Independent
- Max Power Dissipation :
- 1W
- Fall Time (Typ) :
- 35 ns
- Interface IC Type :
- HALF BRIDGE BASED MOSFET DRIVER
- Rise Time :
- 50ns
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 75 ns
- Output Current :
- 1A
- Terminal Position :
- Dual
- Power Supplies :
- 15V
- Mounting Type :
- Through Hole
- High Side Voltage - Max (Bootstrap) :
- 200V
- Current - Peak Output (Source, Sink) :
- 1A 1A
- Datasheets
- IR2011PBF
Gate Drivers Infineon Technologies IR2011PBF Overview
The Infineon Technologies IR2011PBF is a high-performance gate driver designed to efficiently manage power in complex electronic systems. As part of the esteemed Infineon gate driver line, the IR2011PBF facilitates robust operation of MOSFETs and IGBTs. Its optimized layout is crucial for applications requiring precise high-side and low-side gate drive signals. The IC features an 8-DIP package, ensuring compatibility with a variety of circuit designs and contributing to its reliability and ease of integration. This Gate Drivers Infineon Technologies IR2011PBF's adaptability and efficiency make it an ideal choice for developers looking to enhance system performance while maintaining energy efficiency and thermal management.
IR2011PBF Features
The IR2011PBF gate driver includes several key features that distinguish it in the market:
- Independent high-side and low-side driver channels that provide flexible control options.
- Integrated under-voltage lockout for both channels, enhancing operational safety.
- High pulse current output of up to 2A on both channels, suitable for driving larger MOSFETs and IGBTs.
- Matched propagation delay for both channels, crucial for high-frequency operation and reducing switching losses.
- Durable design that withstands harsh industrial environments.
IR2011PBF Applications
- DC/AC Inverters - Utilized in the conversion of DC to AC power, ensuring efficient switching of power devices in renewable energy systems like solar inverters.
- Motor Drives - Drives high-power motors by efficiently managing the switching of transistors in variable frequency drives, thus optimizing motor performance and energy usage.
- Power Supplies - Enhances the reliability and efficiency of switch-mode power supplies through precise control of power components.
- Automotive Applications - Supports automotive electronics by controlling the high power devices needed for electric vehicle power management systems.
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