IPW90R1K0C3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

1 Ω @ 3.3A, 10V

Pulsed Drain Current-Max (IDM) :

12A

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Vgs(th) (Max) @ Id :

3.5V @ 370µA

Package / Case :

TO-247-3

Turn-Off Delay Time :

400 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Power Dissipation :

89W

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 10V

Drain-source On Resistance-Max :

1Ohm

Max Dual Supply Voltage :

900V

Rise Time :

20ns

Turn On Delay Time :

70 ns

Packaging :

Tube

Series :

CoolMOS™

Avalanche Energy Rating (Eas) :

97 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-247AD

Vgs (Max) :

±20V

Number of Terminations :

3

Mount :

Through Hole

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

89W Tc

Fall Time (Typ) :

35 ns

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

5.7A

Transistor Element Material :

SILICON

Factory Lead Time :

6 Weeks

Published :

2008

Pin Count :

3

Terminal Position :

Single

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 100V