IPU50R950CEAKMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Number of Terminations :

3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Series :

CoolMOS™ CE

Vgs(th) (Max) @ Id :

3.5V @ 100µA

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

68 mJ

JESD-609 Code :

e3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Terminal Position :

Single

Power Dissipation-Max :

53W Tc

DS Breakdown Voltage-Min :

500V

Pulsed Drain Current-Max (IDM) :

12.8A

Drain-source On Resistance-Max :

0.95Ohm

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.3A Tc

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

950m Ω @ 1.2A, 13V

Factory Lead Time :

6 Weeks

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Published :

2008

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

JESD-30 Code :

R-PSIP-T3

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

not_compliant

Number of Elements :

1

Drain to Source Voltage (Vdss) :

500V

Drive Voltage (Max Rds On,Min Rds On) :

13V

Vgs (Max) :

±20V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

231pF @ 100V