IPS80R600P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

ECCN Code :

EAR99

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Avalanche Energy Rating (Eas) :

20 mJ

JESD-30 Code :

R-PSIP-T3

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Series :

CoolMOS™ P7

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Transistor Application :

SWITCHING

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 500V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

22A

Packaging :

Tube

Drain to Source Voltage (Vdss) :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.6Ohm

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Power Dissipation-Max :

60W Tc

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.4A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

800V

JESD-609 Code :

e3

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

8A Tc

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-251-3 Stub Leads, IPak

Vgs (Max) :

±20V