IPS118N10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

4320pF @ 50V

Package / Case :

TO-251-3 Stub Leads, IPak

Terminal Position :

Single

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

11.8m Ω @ 75A, 10V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Vgs(th) (Max) @ Id :

4V @ 83μA

Pulsed Drain Current-Max (IDM) :

300A

DS Breakdown Voltage-Min :

100V

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Avalanche Energy Rating (Eas) :

120 mJ

Drain Current-Max (Abs) (ID) :

75A

ECCN Code :

EAR99

Reach Compliance Code :

Unknown

Transistor Element Material :

SILICON

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSIP-T3

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

JESD-609 Code :

e3

Number of Terminations :

3

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

125W Tc

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Pin Count :

3

Drain-source On Resistance-Max :

0.0118Ohm

Packaging :

Tube

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Published :

2008

JEDEC-95 Code :

TO-251AA