IPS110N12N3GBKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

FET Type :

N-Channel

Continuous Drain Current (ID) :

75A

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Pbfree Code :

No

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.011Ohm

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

120 mJ

Power Dissipation-Max :

136W Tc

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Rds On (Max) @ Id, Vgs :

11m Ω @ 75A, 10V

Vgs(th) (Max) @ Id :

4V @ 83μA

Input Capacitance (Ciss) (Max) @ Vds :

4310pF @ 60V

Pin Count :

4

Lead Free :

Contains Lead

Packaging :

Tube

Series :

OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Published :

2008

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Max Dual Supply Voltage :

120V

Package / Case :

TO-251-3 Stub Leads, IPak

Halogen Free :

Not Halogen Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Mount :

Through Hole

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)