IPP90R1K2C3XKSA2
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- Mfr.Part #
- IPP90R1K2C3XKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 5.1A TO220-3
- Stock
- 29,031
- In Stock ：
- 29,031
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 3.5V @ 310μA
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- CoolMOS™
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 5.1A Tc
- Power Dissipation-Max :
- 83W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 710pF @ 100V
- Drain to Source Voltage (Vdss) :
- 900V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs (Max) :
- ±20V
- Factory Lead Time :
- 18 Weeks
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 1.2 Ω @ 2.8A, 10V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPP90R1K2C3XKSA2
N-Channel 1.2 Ω @ 2.8A, 10V ±20V 710pF @ 100V 28nC @ 10V 900V TO-220-3
IPP90R1K2C3XKSA2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 710pF @ 100V.The transistor must receive a 900V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPP90R1K2C3XKSA2 Features
a 900V drain to source voltage (Vdss)
IPP90R1K2C3XKSA2 Applications
There are a lot of Infineon Technologies
IPP90R1K2C3XKSA2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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