IPP80P04P407AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0077Ohm

Series :

Automotive, AEC-Q101, OptiMOS™

Halogen Free :

Halogen Free

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Input Capacitance (Ciss) (Max) @ Vds :

6085pF @ 25V

Max Dual Supply Voltage :

-40V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate Charge (Qg) (Max) @ Vgs :

89nC @ 10V

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

80A

Rds On (Max) @ Id, Vgs :

7.7m Ω @ 80A, 10V

Drain to Source Voltage (Vdss) :

40V

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

41 ns

Turn-Off Delay Time :

34 ns

Turn On Delay Time :

25 ns

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

Number of Elements :

1

Vgs (Max) :

±20V

Packaging :

Tube

Package / Case :

TO-220-3

Lead Free :

Contains Lead

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Rise Time :

15ns

Published :

2011

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Factory Lead Time :

14 Weeks

FET Type :

P-Channel

Vgs(th) (Max) @ Id :

4V @ 150μA

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

Power Dissipation-Max :

88W Tc