IPP80N06S2L07AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tube

Max Dual Supply Voltage :

55V

Terminal Position :

Single

Number of Pins :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Avalanche Energy Rating (Eas) :

450 mJ

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

80A

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Power Dissipation-Max :

210W Tc

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

3160pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Mounting Type :

Through Hole

FET Type :

N-Channel

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

7m Ω @ 60A, 10V

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.01Ohm

Number of Terminations :

3

Vgs(th) (Max) @ Id :

2V @ 150μA