IPP80N06S207AKSA4

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Terminal Position :

Single

Published :

2006

Number of Terminations :

3

Packaging :

Tube

Factory Lead Time :

10 Weeks

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

55V

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 68A, 10V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

55V

Vgs (Max) :

±20V

Pbfree Code :

yes

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

320A

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

No

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Avalanche Energy Rating (Eas) :

530 mJ

Drain-source On Resistance-Max :

0.0066Ohm

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

4V @ 180μA

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

JESD-609 Code :

e3

Mounting Type :

Through Hole

Drain Current-Max (Abs) (ID) :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE